2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f mmst4401 transistor (npn) features power dissipation p cm: 0.2 w (tamb=25 ) collector current i cm : 0.6 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j ,t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic=100a , i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 6 v collector cut-off current i cbo v cb =35v, i e =0 0.1 a collector cut-off current i ceo v ce =35v, i b =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =1v, i c = 150ma 100 300 dc current gain h fe(2) v ce =2v, i c = 500ma 40 collector-emitter saturation voltage v ce(sat) i c =150 ma, i b =15ma 0.4 v base-emitter saturation voltage v be(sat) i c = 150 ma, i b =15ma 0.95 v transition frequency f t v ce = 10v, i c = 20ma f = 100mhz 250 mhz output capacitance c ob v cb =10v, i e = 0 f= 1mhz 6.5 pf delay time t d 15 ns rise time t r v cc =30v, v be =2v i c =150ma, i b1 =15ma 20 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 = i b2 = 15ma 30 ns marking: k3x unit: mm sot-323 1. base 2. emitter 3. collector mmst4401 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
